The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Jun. 04, 1999
Applicant:
Inventors:
Jason C. S. Chu, Yunghe, TW;
Jerry C. S. Lin, Tainan, TW;
Roger Tun-Fu Hung, Fengshan, TW;
Chih-Ta Wu, Hsinchu, TW;
Assignee:
Mosel Vitelic, Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/126 ;
U.S. Cl.
CPC ...
G01R 3/126 ;
Abstract
A method for determining a crack limit of a target film deposited on a wafer in production after a post annealing procedure is disclosed. The crack limit is determined by adopting and adjusting the thermal shrinkage rates of a plurality of target films deposited on bare wafers and annealed. The test results on bare wafers can be applied to the production wafers to prevent from film cracking and/or inspect instrumental conditions.
Chu, Jason C. S.. (2001). Method for determining crack limit of film deposited on semiconductor wafer (U.S. Patent No. 6265233). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6265233
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile