The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Jan. 07, 2000
Yasushi Hamazawa, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
On the surface of an n-type semiconductor layer as a drain region (,), a plurality of body regions (,) formed by p-type diffusion regions are formed regularly. And within each of the body regions (,), an n-type source region (,) is formed with a certain interval from the periphery, and a gate electrode (,) is provided through a gate oxide film (,) on the surface of a channel region (,) between the source region (,) and the drain region (,), and a drain electrode (,) is formed through a contact region (,) on the drain region (drain cell) (,) surrounded by the plurality of body regions (,). And the body region (,) is formed as an octagon on the plane, and the drain cell (,) is formed as a quadrilateral on the plane. As a result, a semiconductor device is obtained which has a lateral DMOS with an increased gate width per unit area that can increase the withstand voltage.