The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Sep. 25, 1998
Applicant:
Inventors:
Masahiro Ono, Osaka, JP;
Takashige Ogata, Osaka, JP;
Toshiharu Oya, Osaka, JP;
Masurao Yoshii, Osaka, JP;
Assignee:
Sanyo Electric Co., Ltd., Osaka, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/9788 ;
U.S. Cl.
CPC ...
H01L 2/9788 ;
Abstract
It is an object to increase the number of rewriting timing permitted for a split-gate-type nonvolatile semiconductor memory device. Ends S of floating gate,are disposed in inclined portions of LOCOS oxide films,A and,B so as to sharpen projections of the floating gate to have an angle B.
Ono, Masahiro. (2001). Nonvolatile semiconductor memory device and manufacturing method therefor (U.S. Patent No. 6262452). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6262452
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile