The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2001

Filed:

Jan. 13, 1999
Applicant:
Inventors:

Yoshihiro Izumi, Kashihara, JP;

Osamu Teranuma, Tenri, JP;

Tokihiko Shinomiya, Nara, JP;

Toshiyuki Sato, Kyoto, JP;

Satoshi Tokuda, Kusatsu, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/700 ;
U.S. Cl.
CPC ...
H01L 2/700 ;
Abstract

A two-dimensional image detector of the present invention includes: an active matrix substrate equipped with charge storage capacitors and TFTs; and an opposing substrate equipped with a semiconductor substrate. The two-dimensional image detector is formed by adhering the active matrix substrate and the opposing substrate to each other with an anisotropic conductive adhesive agent. With this structure, since a semiconductor layer is not required to be deposited on the active matrix substrate where the TFTs are already formed, it is possible to use CdTe, CdZnTe, etc. The use of CdTe, CdZnTe, etc. as a material of the semiconductor layer having photoconductivity allows the two-dimensional image detector to show good response and to deal with the dynamic images.


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