The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Dec. 27, 1996
Applicant:
Inventors:
Yoshinori Matsuno, Tokyo, JP;
Hiroaki Morikawa, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; C09K 1/300 ; C09K 1/304 ;
U.S. Cl.
CPC ...
H01L 2/1302 ; H01L 2/1461 ; C09K 1/300 ; C09K 1/304 ;
Abstract
The method of manufacturing a semiconductor apparatus can solve problems in that a semiconductor film is not separated completely from a substrate and a great quantity of etchant is required. Ammonium fluoride is added to a hydrofluoric acid solution, so as to improve the etching rate and promote separation of the semiconductor film from the substrate. A manufacturing apparatus according to the present invention is provided with a re-liquefying function capable of again liquefying vapor of hydrofluoric acid solution so as to use liquefied vapor as the etchant so that the etchant is saved.