The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
May. 14, 1998
A. J. Chang, Hsinchu, TW;
Kuo-Tung Sung, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
The present invention provides a novel integrated circuit device, which has a flash memory cell. The flash memory cell (,) has a tunnel dielectric layer (,) overlying a surface of a semiconductor substrate. A floating gate layer (,) is defined overlying the tunnel dielectric layer. The gate layer has an edge defined thereon, where a sidewall spacer (,) extends along and on the edge. The sidewall spacer includes a first portion defined adjacent to the edge and a second portion extending from the first portion to a region substantially outside the edge. The combination of the sidewall spacer and the gate layer provide a novel surface for increasing gate coupling ratio.