The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
Sep. 08, 1997
Eun Jeong Park, Chungcheongbuk-do, KR;
Sung Chul Lee, Chungcheongbuk-do, KR;
Hyundai Electronics Industries Co., Ltd., Ichon-shi, KR;
Abstract
A semiconductor device in which polysilicon is used to form source and drain regions in an initial process step so as to reduce resistance of bit lines and minimize a junction capacitance and thus improve its reliability, and a method for fabricating the same are disclosed, the semiconductor device including a semiconductor substrate, trenches formed in predetermined areas of the semiconductor substrate, an insualting layer formed in the trenches and beneath a surface of the substrate to have a recess, a polysilicon layer formed on the insualting layer in the trench, source and drain regions formed at both sides of the polysilicon layer beneath a surface of the semiconductor substrate, and gates formed over the semiconductor substrate.