The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 2001
Filed:
May. 24, 1999
Biing-Seng Wu, Jen Te, TW;
Chi Mei Electronics Corp, , TW;
Abstract
A method for forming a TFT device comprises the following steps. First, a first metal layer, a first insulating layer, a active layer and a contact layer are formed on the substrate in sequence. Next, a first photomask is used to define the contact layer, the active layer, the first insulating layer, and the first metal layer. Then, a second insulating layer and a transparent conducting layer are formed on the contact layer and the substrate in sequence. A second photomask is used to define the second insulating layer and the transparent conducting layer to expose a surface of the contact layer. A second metal layer is formed on the transparent conducting layer and contact layer. A third photomask is used to define the second metal layer to form the S/D structures. Then, the S/D structures are used to serve as a mask for etching the contact layer. Then, a passivation layer is formed on the second metal layer, the transparent conducting layer and the substrate, and a four photomask is used to define the passivation layer.