The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Aug. 05, 1999
Stefano Menichelli, Avezzano, IT;
Tommaso Vali, Sezze, IT;
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A voltage translator circuit for driving the rows or wordlines of Flash EEPROM memories, having control logic voltages in the range 0 to 3.3 volts, as well as operating voltages needed for reading, programming or erasing operations in the range −9 to 12 volts. The voltage translator circuit includes a first feedback transistor (TP,), the gate of which (node,) is directly driven by the wordline, and a second feedback transistor (TN,), the gate of which is also driven by the wordline (node,), inserted between the connection node (node,) between the first feedback transistor (TP,) and the gate region of a first switch transistor (pull-up,) and the input node (node,) on the gate region of a second switch transistor (pull-down,).