The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Aug. 19, 1999
Applicant:
Inventor:

Cheng P. Wen, Mission Viejo, CA (US);

Assignee:

Raytheon Company, Lexington, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01P 5/12 ; H01P 3/08 ;
U.S. Cl.
CPC ...
H01P 5/12 ; H01P 3/08 ;
Abstract

A coplanar waveguide structure for use in constructing a monolithic microwave integrated circuit high power amplifier. The coplanar waveguide structure is a coplanar transmission line segment having more than two ground plane electrodes and a plurality of signal/dc current carrying electrodes. The current carrying electrodes are each separated from an adjacent ground plane electrode by a gap. The coplanar waveguide structure forms a shunt inductor for the monolithic microwave integrated circuit high power amplifier. The electrodes are shorted at one end to form the shunt inductor. A center ground plane electrode is preferably at least twice the width of the signal carrying electrode. The gaps between the signal carrying electrode and the ground electrodes are preferably at least one half the width of the signal carrying electrode to minimize current crowding.


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