The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Jan. 25, 2000
Applicant:
Inventors:

Won Chul Song, Taejon, KR;

Chang Jun Oh, Taejon, KR;

Hee Bum Jung, Taejon, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F 3/45 ;
U.S. Cl.
CPC ...
H03F 3/45 ;
Abstract

A CMOS high frequency variable gain amplifier with maximum high frequency operation and wide variable gain characteristics that is formed from an amplifier having a plurality of variable gain amplifier cells connected in series for continuously enabling wide gain variation; and a control voltage generator for generating and outputting the control voltage of the variable gain amplifier cells. By using both the saturation region and the linear region of input differential transistors constituting the variable gain amplifier cells in order to obtain wide gain variation characteristics, it is possible for the variable gain amplifier to operate in the saturation region when the input signal is small to obtain a high gain and to operate in the linear region when the input signal is large to obtain minimum distortion and a low gain. Also, it is possible for the gain to have the characteristics in the form of an exponential function to the gain control voltage.


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