The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Apr. 21, 1999
James S. Congdon, Sudbury, MA (US);
Other;
Abstract
An inverting hysteretic transistor switch having an input terminal, an output terminal and a ground terminal includes, in some embodiments, a metal-oxide semiconductor field effect transistor (MOSFET) having an on switching state and an off switching state. The MOSFET includes a drain terminal connected to the output terminal, a gate terminal and a source terminal connected to the ground terminal. The switch further includes a hysteresis circuit connected to the input terminal and to the gate terminal of the MOSFET. In use, with an input voltage having low-to-high and high-to-low input voltage transitions applied to the input terminal, the hysteresis circuit switches the MOSFET to its on switching state at a first threshold voltage during low-to-high input voltage transitions. In addition, the hyteresis circuit switches the MOSFET to its off switching state at a second threshold voltage, which is less than the first threshold voltage, during high-to-low input voltage transitions.