The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Jan. 07, 1999
Takeshi Iwamoto, Hyogo, JP;
Rui Toyota, Hyogo, JP;
Kaoru Motonami, Hyogo, JP;
Yasuhiro Ido, Hyogo, JP;
Masatoshi Kimura, Hyogo, JP;
Kakutaro Suda, Hyogo, JP;
Kazuhide Kawabe, Hyogo, JP;
Hideki Doi, Hyogo, JP;
Hiroaki Sekikawa, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes: an insulation layer; a fuse layer extending on the insulation layer in one direction and disconnected through light radiation to control a redundant circuit; a pseudo fuse layer on the insulation layer along at least one side of the fuse layer; another insulation layer covering the fuse layer and the pseudo fuse layer; and a protection film formed on another insulation layer and having an opening in a region opposite to the fuse layer. Fuse layers having a spacing of less than 4 &mgr;m or 4.5 to 5.5 &mgr;m. Such a structure allows a semiconductor device with a fuse layer capable of being disconnected reliably and providing a smaller blow trace.