The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Apr. 23, 1999
Applicant:
Inventors:

Eric Adler, Jericho, VT (US);

Henry W. Trombley, Bristol, VT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/972 ;
U.S. Cl.
CPC ...
H01L 2/972 ;
Abstract

A capacitor structure formed on a semiconductor substrate may include a first interconnect wiring (such as copper damascene) and a first conductive barrier layer in contact with the first interconnect wiring. A first capacitor plate, a capacitor dielectric structure and a second capacitor plate may also be included over the first conductive barrier layer. A second conductive barrier layer may be formed on the second capacitor plate and a second planar insulating structure may be formed over the second capacitor plate. Finally, a second interconnect wiring may be embedded within a second planar insulator structure.


Find Patent Forward Citations

Loading…