The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2001

Filed:

Oct. 22, 1998
Applicant:
Inventor:

John M. Shannon, Whyteleafe, GB;

Assignee:

U.S. Philips Corporation, New York, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ; H01L 4/700 ;
U.S. Cl.
CPC ...
H01L 2/904 ; H01L 3/120 ; H01L 3/1036 ; H01L 3/10376 ; H01L 4/700 ;
Abstract

A semiconductor memory device using silicon-rich amorphous silicon alloy material memory elements that are electrically programmable by means of current induced conductivity comprises a layer (,) of the alloy material on opposing sides of which sets of input and output contacts (,) are provided, and discrete conductive elements (,) within the layer which serve as nodes and define programmable conductive paths between input and output contacts to create a three dimensional memory network. The conductive elements can be arranged at one or more levels within the thickness of the alloy layer and preferably are of defined shape forming a predetermined 2D array at each level.


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