The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Feb. 29, 2000
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg,of the first semiconductor layer and the band gap Eg,of the second semiconductor layer satisfy a relationship: Eg,>Eg,. The electron affinity &khgr;,(eV) of the first semiconductor layer and an electron affinity &khgr;,(eV) of the second semiconductor layer satisfy a relationship: 0≦(&khgr;,−&khgr;,)<0.5.