The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Apr. 19, 1999
Koichi Ando, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method for fabricating a very thin oxide film, such as a gate oxide film of a MOS transistor, by oxidizing a substrate, which method can accurately and easily control the thickness of the oxide film to a desired value. The method comprises controlling thickness of the oxide film to be formed, by adjusting partial pressure of oxygen in an ambient including oxygen, without changing temperature of oxidation of said substrate and time of oxidation of said substrate. Alternatively, the method comprises controlling thickness of the oxide film to be formed, by adjusting only pressure of an oxidizing ambient, without changing temperature of oxidation of said substrate and time of oxidation of said substrate.