The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Jun. 16, 1999
Hiroyuki Sugaya, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A manufacturing method of a bipolar transistor that can reduce, without increasing capacitance between base-collector, withstand voltage deterioration and leakage between emitter-base is provided. On an upper surface of an active area of a semiconductor substrate on which an isolation structure is formed by a first insulating film, a first epitaxial growth layer is formed. Then, on an upper surface of a first epitaxial growth layer a third insulating layer is formed in an area larger than that of the first epitaxial growth layer. Thereafter, from a side surface of a first epitaxial growth layer, a second epitaxial growth layer is formed in an area larger than that of a third insulating layer. Thereafter, all over the surface of the semiconductor substrate a first poly-silicon layer, a fourth and fifth insulating layers are formed, an opening is opened with an area approximately equal with that of an active area, and inside the opening a second poly-silicon layer and emitter layer are formed. Thereby, a semiconductor device is obtained.