The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
May. 21, 1999
Hans Rohdin, Los Altos, CA (US);
Chung-Yi Su, Fremont, CA (US);
Arlene Sachiyo Wakita-Oyama, Palo Alto, CA (US);
Nicolas J. Moll, La Honda, CA (US);
Agilent Technologies, Inc., Palo Alto, CA (US);
Abstract
A transistor structure with a degradation-stop layer that prevents degradation of underlying semiconductor layers while minimizing any increase in the gate leakage current is disclosed. In one embodiment, a transistor structure includes: a substrate; a channel layer formed of a charge transport material over the substrate; a Schottky barrier layer formed of an aluminum-containing material over the channel layer; a degradation-stop layer formed of a substantially aluminum-free material over the Schottky barrier layer; and a source, a drain and a gate. The source and the drain being formed over or alloyed through the degradation-stop layer, and a lower portion of the gate extends down through an exposed portion of the degradation-stop layer and is in physical and electrical contact with the Schottky barrier layer.