The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
May. 22, 1998
John Edward Cunningham, Lincroft, NJ (US);
Keith Wayne Goossen, Aberdeen, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
A semiconductor device having a buried doped layer of semiconductor material and a non-alloyed contact to the buried doped layer. The non-alloyed contact is made ohmic by the presence of an underlying delta-doped monolayer. The semiconductor device is made by placing a stop-etch layer on top of a buried doped layer and forming at least one delta-doped monolayer in either the stop-etch layer or the buried doped layer. Layers of semiconductor material disposed above the stop-etch layer are removed with an etchant to define an active region of the semiconductor device. The stop-etch layer prevents the etchant from removing the delta-doped monolayer. A non-alloyed metal film is then deposited over the delta-doped monolayer to form an ohmic contact to the buried doped layer.