The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Nov. 26, 1997
Yawara Kaneko, Tokyo, JP;
LumiLeds Lighting, U.S., LLC, San Jose, CA (US);
Abstract
A device with a low resistance zone having confinement, superior reproducibility, and a very high yield comprises a plurality of semiconductor layers, wherein layer resistivity is changed by annealing. The semiconductor layers include a resistance zone having a high activation coefficient of acceptor impurities and a resistance region having a low activation coefficient of acceptor impurities. The activation coefficient is controlled by irradiation with laser light. In addition, laser light is irradiated and absorbed into the semiconductor layers in one part of, or the entire, semiconductor layers, such that layer resistivity in the irradiated regions is changed by annealing resulting from such irradiation.