The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 2001
Filed:
Jan. 04, 2000
Applicant:
Inventor:
Dong-jin Jung, Suwon, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
A method of forming a crystalline perovskite ferroelectic layer without a non-perovskite crystalline phase, includes depositing an amorphous ferroelectric material layer on a semiconductor substrate, annealing the amorphous ferroelectric material layer, and sequentially dry etching and wet etching the top surface of the ferroelectric material layer, such that non-perovskite crystalline phase is removed from the ferroelectric material layer.
Quick Actions:
Jung, Dong-jin. (2001). Method for forming a crystalline perovskite ferroelectric material in a semiconductor device (U.S. Patent No. 6258608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6258608
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile