Memory device including a burn-in controller for enabling multiple wordiness during wafer burn-in

Abstract

A semiconductor memory device is capable of simultaneously driving multiple wordlines during wafer burn-in. The semiconductor memory device includes a wordline driving block, a predecoder, a row decoding block, and a burn-in controller. The row decoding block connects to the burn-in controller and the wordline driving block and generates a plurality of wordline enable signals for controlling the wordline driving block. The row decoding block includes a plurality of row decoders, each associated with multiple wordlines. For normal memory accesses, decoding units in the row decoders determine which of the row decoders are activated. In a wafer burn-in mode, the burn-in controller controls which or the row decoders are activated. Transistors in the decoding units can be sized for enabling single wordlines, and transistors in the burn-in controller can be sized for simultaneously enabling multiple wordlines. Accordingly, the semiconductor memory device can sufficiently activate the multiple wordlines during the wafer burn-in although the driving ability of the row decoder is small.