The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Aug. 08, 2000
Reed W. Adams, Plano, TX (US);
David J. Baldwin, Allen, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A variable transconductance current mirror circuit includes a first field effect transistor having a gate, a source, and a drain, and a second field effect transistor having a gate, a source, and a drain. The gate of the second transistor is coupled to the gate of the first transistor, and a current source is coupled to the gates of the first and second transistors. The circuit also includes a voltage supply coupled to the sources of the first and second transistors. The circuit further includes a first diode having an anode and a cathode. The anode of the first diode is coupled to the gates of the first and second transistors, and the cathode of the first diode is coupled to the source of the first and second transistors. The first diode comprises a zener diode having a reverse breakdown voltage operable to prevent gate oxide breakdown of the first and second transistors. The circuit may also include a second diode having an anode coupled to the drain of the first transistor, and a cathode coupled to the gates of the first and second transistors. The second diode is operable to vary the transconductance of the first and second transistors in response to changes in the current supplied to the drain of the first transistor.