The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 03, 2001

Filed:

May. 04, 1998
Applicant:
Inventors:

Charles E. Weitzel, Mesa, AZ (US);

Nada El-Zein, Phoenix, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/900 ; H01L 2/980 ; H01L 3/1112 ; H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/900 ; H01L 2/980 ; H01L 3/1112 ; H01L 2/976 ;
Abstract

An integrated smart power circuit including a power semiconductor device fabricated on a conducting substrate with a source positioned adjacent the upper surface of the substrate, a control terminal between the upper and lower surfaces, and a drain positioned adjacent the lower surface of the substrate. A high resistance layer is formed on a portion of the upper surface of the substrate, either directly overlying or adjacent to the power device, and doped semiconductor material is positioned on the high resistance layer. Control circuitry is formed in the doped semiconductor material. The high resistance layer can be conveniently formed by growing a layer of AlAs and growing doped layers on the AlAs. The AlAs can be easily oxidized thereafter.


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