The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Jan. 14, 1997
Applicant:
Inventors:
Yoshifumi Yoshida, Chiba, JP;
Shinichi Yoshida, Chiba, JP;
Yutaka Saitoh, Chiba, JP;
Jun Osanai, Chiba, JP;
Assignee:
Seiko Instruments Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/978 ; H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 2/978 ; H01L 2/906 ;
Abstract
A semiconductor device comprises a depletion-type NMOS transistor having a source region, a drain region connected to a power supply line, and a gate electrode connected to a ground line. An enhancement-type NMOS transistor has a source connected to the ground line, a drain connected in series with the source of the depletion-type MOS transistor between the power supply line and the ground line to define an output terminal, and a gate electrode connected directly to the output terminal.