The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Sep. 18, 1997
Applicant:
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10392 ;
U.S. Cl.
CPC ...
H01L 3/10392 ;
Abstract
In a field-effect transistor, one of the distance between a gate electrode and a source electrode and the distance between the gate electrode and a drain electrode which one distance is on a side where a signal of a high frequency is applied is made longer than the other distance on a side where a signal of a low frequency is applied.
Quick Actions:
Kubota, Yasushi. (2001). Tft cmos logic circuit having source/drain electrodes of differing spacing from the gate electrode for decreasing wiring capacitance and power consumption (U.S. Patent No. 6255695). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6255695
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