The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Nov. 21, 1997
Kuo-Hua Lee, Orlando, FL (US);
Sailesh M. Merchant, Orlando, FL (US);
Agere Systems Guardian Corp., Orlando, FL (US);
Abstract
The present invention provides for use with an integrated circuit, an embedded memory having a transistor in contact with an interconnect formed within a dielectric layer overlaying the transistor. In one embodiment, the embedded memory comprises a capacitor located on the dielectric layer that contacts the interconnect. In this particular embodiment, the capacitor includes a first electrode located on the interconnect wherein the first electrode is a layer of aluminum, aluminum alloy or titanium nitride and substantially free of a titanium layer. In one advantageous embodiment, the first electrode layer is an aluminum alloy. Moreover, the thickness of the first electrode may, of course, varying depending on the design. However, in one is particular embodiment, the first electrode may have a thickness ranging from about 10 nm to about 50 nm.