The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Oct. 01, 1999
Applicant:
Inventors:
Leif C. Olsen, Plano, TX (US);
Leland S. Swanson, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
Silicon carbide (SiC) is used as the stop layer for the chemical-mechanical polishing used to planarize the surface of interlevel dielectrics, making the resistance of the vias more uniform. Alternatively, silicon carbonitride or silicon carboxide can be used in place of silicon carbide.
Olsen, Leif. (2001). Silicon carbide stop layer in chemical mechanical polishing over metallization layers (U.S. Patent No. 6255211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6255211
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile