The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Jun. 25, 1999
Rao V. Annapragada, San Jose, CA (US);
Milind G. Weling, San Jose, CA (US);
Philips Electronics North America Corp., New York, NY (US);
Abstract
A method for fabricating inter-metal oxide in semiconductor devices and semiconductor devices is provided. The method begins by providing a semiconductor substrate having a plurality of patterned conductive features. The method then moves to where a high density plasma (HDP) operation is performed and is configured to deposit an oxide layer over the plurality of patterned conductive features. The HDP operation includes a deposition component and a sputtering component. The deposition component is driven by a deposition gas and the sputtering component is driven by a sputtering gas. The HDP operation forms oxide pyramids over the plurality of patterned conductive features. The method now moves to where the deposition gas is removed to close off the deposition component in the HDP operation. Now, the HDP operation is run with the sputtering gas while retaining the sputtering component. The sputtering component is configured to substantially remove the oxide pyramids from over the plurality of patterned conductive features. Preferably, the plurality of patterned conductive features are either patterned metallization features or patterned polysilicon features.