The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2001
Filed:
Aug. 04, 1999
Marc W. Cantell, Sheldon, VT (US);
Kenneth Giewont, Hopewell Junction, NY (US);
Jerome B. Lasky, Essex Junction, VT (US);
Kirk D. Peterson, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of preparing silicon semiconductor surfaces prior to metal silicide formation. In particular, it teaches a method of treating about 10 to about 200 Å of a surface of the silicon with a plasma source after activating the source and drain regions, prior to an HF etch and deposition of a metal for silicide formation. Discontinuities in the metal silicide formed on narrow polysilicon lines at the point where source and drain regions intersect are surprisingly diminished. This results in more continuous, uniform silicide formation hence the polysilicon lines and the source and drain regions have substantially lower resistance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile