The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Jan. 04, 2000
Kwo-Jen Liu, San Jose, CA (US);
VLSI Technology, Inc., San Jose, CA (US);
Abstract
A method and apparatus for programmable read only memory with high speed differential sensing at low operating voltage. In one embodiment, a programmable memory cell is comprised of word line, a bitline, and a transistor. The transistor, representing a single binary digit (bit), has a gate coupled to a word line, a drain coupled to a bitline, and a source capable of being programmed to provide a logic level of 0 and a logic level of 1. By programming the source of the transistor, the bitline approximately equal capacitance for both logic level 0 and logic level 1 states.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile