The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Dec. 31, 1997
Jei-hwan Yoo, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor memory device having a row redundancy scheme in which the time to enable a word line during a normal path is less than that of a conventional device, to enhance the operation speed of a memory chip, and the number of common redundancies are maximized to enhance the redundancy capability, and a method for curing a defective cell. The semiconductor memory device has a plurality of global blocks, each of which includes a plurality of unit matrixes having a normal block and a redundancy block, a normal division word line driver, a redundancy division word line driver, a main decoder and an auxiliary decoder. In the main decoder, an output signal is selectively activated according to a row address signal regardless of using the redundancy cell. Also, in the auxiliary decoder, when a corresponding global block is selected according to the row address signal for selecting a global block in a normal operation mode or a redundancy scheme of the corresponding block is used in the redundancy operation mode, an output signal is selectively activated according to the row address signal.