The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
May. 26, 2000
Wayne F. Ellis, Jericho, VT (US);
Louis L. Hsu, Fishkill, NY (US);
Brian L. Ji, Fishkill, NY (US);
Yujon Li, Poughkeepsie, NY (US);
Oliver Weinfurtner, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Improved transistor array device performance is obtained by use of bias voltage regulation which tracks with a fraction of a monitor transistor threshold voltage. The circuitry and methods are especially useful for improving the performance of transistor array devices such as DRAM and embedded DRAM. These benefits are obtained especially when at least two bias voltages normally supplied to the array are regulated by tracking with a fraction of an actual threshold voltage of at least one monitor transistor. Performance improvements include improved reliability, wider operational bias conditions, reduced power consumption and (in the case of memory cells) improved retention time.