The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Aug. 10, 1999
Applicant:
Inventor:
Erkki Miettinen, Helsinki, FI;
Assignee:
ABB Industry OY, Helsinki, FI;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 5/153 ;
U.S. Cl.
CPC ...
H03K 5/153 ;
Abstract
A method and arrangement for determining state information of a high-power semi-conductor, the power semiconductor comprising a collector (C), an emitter (E) and a gate (G), and a gate driver (,) comprising an auxiliary voltage input is connected to the gate of the power semiconductor. The method is characterized by steps wherein the auxiliary voltage (Vcc) of the gate driver (,) is used as reference voltage, saturation voltage (Vsat) of the power semiconductor (,) is compared with the reference voltage by using an optoisolator (,), and a detection signal of state information is generated depending on the magnitudes of the saturation voltage and the reference voltage.