The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Mar. 07, 1996
Tadashi Yamamoto, Yokkaichi, JP;
Shizuo Sawada, Urawa, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Silicon oxide layers are provided in a substrate. That part of the silicon oxide layer which is located in a memory cell section MC has a thickness. That part of the silicon oxide layer which is located in a peripheral circuit section PC has a thickness, which is less than the thickness. The memory cell section MC has transistors, each having a source region and a drain region which contact the silicon oxide layer. The peripheral circuit section PC has transistors, each having a source region and a drain region which are spaced apart from the silicon oxide layer. The transistors of the peripheral circuit section PC are provided in well regions. A back-gate bias is applied to the transistors of the peripheral circuit section PC through impurity layers.