The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Aug. 17, 1999
Min Hwan Kim, Bucheon, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A power DMOS transistor having an improved current driving capability and improved reliability is provided. A fabrication method thereof is also provided. The DMOS transistor includes a semiconductor substrate having a first conductivity type and a semiconductor region having a second conductivity type formed on the semiconductor substrate. A drain having a second conductivity type is formed on the semiconductor region. A high-concentration buried impurity layer having a second conductivity type is formed on the semiconductor region under the drain. A body region having a first conductivity type is formed in the semiconductor substrate spaced a predetermined distance from the semiconductor region. A source having a second conductivity type is formed on the body region. A gate electrode is formed on the semiconductor substrate having a gate insulative film formed thereon. A source electrode and a drain electrode coupled respectively to the source and the drain are formed on the resultant structure.