The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Mar. 19, 1999
Christopher Harris, Sollentuna, SE;
Andrei Konstantinov, Järfälla, SE;
Acreo AB, Kista, SE;
Abstract
In a high power IMPATT ( Impact Avalanche Transit Time) diode for generating high frequency signals two electrodes, anode (,) and cathode (,), are arranged with a semiconductor layer therebetween. Said semiconductor layer comprises a drift layer (,) for transport of charge carriers between the electrodes. The semiconductor layer is made of crystalline SiC and it is provided with means (,) adapted to locally increase the electric field in the drift layer substantially with respect to the average electric field therein for generating an avalanche breakdown at a considerably lower voltage across the electrodes than would the electric field be substantially constant across the entire drift layer.