The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Mar. 14, 2000
Applicant:
Inventor:
Hitoshi Nishio, Shiga, JP;
Assignee:
Kaneka Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/10376 ; H01L 3/10216 ;
U.S. Cl.
CPC ...
H01L 3/10376 ; H01L 3/10216 ;
Abstract
An amorphous silicon-based thin film photovoltaic device having a glass substrate and a laminate structure formed on the glass substrate and consisting of a transparent electrode, a semiconductor layer containing an amorphous silicon-based semiconductor and a back electrode, in which the glass substrate has a transmittance of 88 to 90% for light having a wavelength of 700 nm and 84 to 87% for light having a wavelength of 800 nm.