The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Oct. 06, 1999
Kazuo Saki, Yokohama, JP;
Shuji Katsui, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
Disclosed is a method of manufacturing a semiconductor device, including the step of supplying an oxidizing gas and a nitriding gas onto one main surface of a semiconductor substrate while heating the substrate so as to oxynitride the surface region of the substrate, wherein the supplying step is performed such that the gaseous phase above the main surface of the substrate forms a first region having a substantially uniform temperature in a direction perpendicular to the main surface of the substrate and a second region interposed between the first region and the substrate and having a temperature gradient in a direction perpendicular to the main surface of the substrate such that the temperature is elevated toward the substrate, and the distance from the main surface of the substrate to the interface between the first and second regions is set at 9.5 cm or less.