The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Apr. 08, 1999
Applicant:
Inventors:
Jesse C. Shan, Vancouver, WA (US);
Chang-Kuei Huang, Camas, WA (US);
Steve H. Y. Yang, Vancouver, WA (US);
Assignee:
WaferTech, L.L.C., Camas, WA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/142 ;
U.S. Cl.
CPC ...
H01L 2/142 ;
Abstract
A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.
Quick Actions:
Shan, Jesse. (2001). Method for depositing high density plasma chemical vapor deposition oxide with improved topography (U.S. Patent No. 6251795). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6251795
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile