The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Jan. 04, 1999
Yeh-Sen Lin, Pa Teh, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A dielectric layer is deposited over an etching stop layer. Then, a photoresist pattern is patterned on the dielectric layer. An anisotropical etching is performed to etch the dielectric layer by using the photoresist pattern as an etching mask to generate a slot in the dielectric layer. An isotropical etching is subsequently performed using the photoresist pattern as an etching mask. A further anisotropical etching is used to create contact holes to the substrate. Then, the photoresist pattern is stripped. A conductive layer is deposited along the surface of the etched dielectric layer and on the side walls of the contact holes. A filling material is refilled into the cup-shape cavities. The upper portion of the conductive layer is left exposed by the filling material. A selective etching step is performed to remove the upper portions of the conductive layer by using the filling material as a mask. The filling material and the etched dielectric layer are removed. Finally, a dielectric film is deposited along the surface of the first storage node and a conductive layer is deposited over the dielectric film.