The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 2001
Filed:
Aug. 09, 1999
Applicant:
Inventors:
Takaaki Ami, Kanagawa, JP;
Katsuyuki Hironaka, Kanagawa, JP;
Chiharu Isobe, Tokyo, JP;
Yuji Ikeda, Kanagawa, JP;
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 2/900 ; C01G 3/500 ; C01F 1/100 ; B05D 5/00 ; C23C 1/600 ;
U.S. Cl.
CPC ...
C01G 2/900 ; C01G 3/500 ; C01F 1/100 ; B05D 5/00 ; C23C 1/600 ;
Abstract
A method of producing a bismuth layered compound that includes the steps of providing a substrate, dissolving Bi, Sr and Ta containing compounds in an organic solvent to form a solution having a Bi:Sr:Ta volume ratio of 2:1:2, evaporating the solution and depositing the evaporated solution onto the substrate, heating the substrate to form a thin film having a fluorite structure, and heating the thin film in an oxidizing atmosphere to convert the thin film having a fluorite structure to a thin film comprising Bi,SrTa,O,.