The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2001

Filed:

Mar. 11, 1999
Applicant:
Inventors:

Yukinori Matsumura, Kanagawa-ken, JP;

Yukihiko Sugimoto, Kanagawa-ken, JP;

Kotaro Hori, Kanagawa-ken, JP;

Assignee:

Komatsu Limited, Kanagawa-ken, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 2/600 ;
U.S. Cl.
CPC ...
B23K 2/600 ;
Abstract

In a laser marking method for making a dot mark on a semiconductor wafer by using laser beam, molten splashes which arise at the laser marking are prevented from adhering to a surface of the wafer and a shape of the dot mark is kept in a stable posture with its visibility being ensured even after the marking made throughout various and multistage steps in a manufacturing process by the semiconductor apparatus. The method comprises forming a transparent thin film on at least a dot mark-formation area of a semiconductor wafer body of the wafer; irradiating the dot mark-formation area with laser beam having a wavelength selected in advance, on the transparent thin film; melting and deforming the wafer body by the laser beam transmitting the transparent thin film to form a dot mark; and by utilizing the heat generated when the wafer body is melted, deforming the transparent thin film, along with the deformation of the dot mark, into the same shape as the dot mark without a breakdown of the transparent thin films.


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