The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Mar. 18, 1998
Yow-Juang William Liu, San Jose, CA (US);
Gu Fung David Tsuei, Sunnyvale, CA (US);
Jian Chen, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method for manufacturing a non-volatile memory device, the device having a core memory cell region and a periphery region, comprising the steps of: forming memory cell gate structures in the core memory cell region; forming active regions adjacent to the gate structure through a blanket implant; forming an implant/etch mask; implanting an impurity into one of the active regions; etching an oxide layer in the implant region; and forming active devices in the periphery region. In a further aspect, the method comprises method of performing a self aligned source etch in forming a memory device, comprising: forming resist spacers adjacent to the channel regions of the memory device; and etching the oxide layer.