The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Apr. 26, 2000
Toshiyuki Hirota, Tokyo, JP;
Kazuhiro Takeda, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
There is presented a method of manufacturing a cylindrical capacitor, which has the steps of forming a conductive film over the entire surface of a semiconductor substrate which includes a hole that is to function as a mould of a cylindrical-capacitor lower electrode, without changing the form of the hole; and coating thick the entire surface of the semiconductor substrate with photoresist so as to fill up said hole; wherein the exposure is made in such a way that the oblique components of the incident light with respect to the normal to the semiconductor substrate is substantially dominant, at least, in the formation region of said lower electrode. The present invention can provide a method in which sufficient photoresist is made to remain inside of the hole for the cylindrical capacitor so as to protect a conductive film therein, while an unnecessary photoresist lying outside of the hole is thoroughly removed, and produce a cylindrical capacitor of constant good quality for a next-generation semiconductor memory device with a high throughput.