The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Sep. 07, 1999
Applicant:
Inventor:
Tsuyoshi Tsutsui, Kyoto, JP;
Assignee:
Rohn Co., Ltd., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/100 ;
U.S. Cl.
CPC ...
H01L 2/100 ;
Abstract
In a method for manufacturing semiconductor light emitting device, when a gallium nitride based compound semiconductor layers which include at least an n-type layer and p-type layer and which form a light emitting layer, are laminated on a substrate and heat treatment is performed for activation of the p-type layer of the laminated semiconductor layers, the heat treatment is performed under an atmosphere including oxygen. With this arrangement, the heat treatment for activating the p-type layer of the laminated semiconductor layers comprising gallium nitride based compound semiconductor can be performed in a short time and moreover to reliably perform activation.