The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Jul. 13, 2000
Clive Martin Jones, Austin, TX (US);
Jin Zhao, Austin, TX (US);
Advanced Micro Devices, Sunnyvale, CA (US);
Abstract
Semiconductor structures having dielectric material layers that are below 3 nanometers in thickness can now be measured with greater precision and in less time using a SIMS device. In an example embodiment of the present invention, a method of measuring the thickness of a dielectric material layer of a semiconductor structure formed on a substrate includes directing a high energy ion beam at a portion of the substrate and sputtering off a plurality of targeted ions from the substrate. The thickness of the dielectric material layer is then determined as a function of a dosage level of the targeted ion and a density of the targeted ion in the dielectric material.