The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Jan. 28, 1999
Applicant:
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/08 ;
U.S. Cl.
CPC ...
C30B 7/08 ;
Abstract
Disclosed is a method for the growth of a single crystal having excellent crystallinity, uniform quality in the inside thereof and hence excellently uniform optical properties, the method enabling an improvement in yields. The invention resides in a method for the growth of a single crystal of &bgr;-type barium borate (&bgr;-BaB,O,), the method comprising heating a crucible,indirectly to grow a &bgr;-BaB,O,single crystal,from a melt of barium borate (BaB,O,) contained in the crucible and using no flux by using a seed crystal,of &bgr;-BaB,O,.