The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 19, 2001
Filed:
Apr. 10, 1996
Hiroyoshi Komobuchi, Kyoto, JP;
Akira Fukumoto, Osaka, JP;
Takahiro Yamada, Osaka, JP;
Takao Kuroda, Osaka, JP;
Yuji Matsuda, Osaka, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A solid state imaging device has: a first polysilicon layer,; a second polysilicon layer,; a photoelectric converting portion or PD,; a read gate,; a read channel,(in this case, an N-layer) which is formed in a semiconductor below the read gate; a P-layer,which prevents a signal charge from erroneously entering a VCCD of a unit pixel adjacent in a horizontal direction; a P-layer,which defines the transfer channel region of a VCCD; and a VCCD,which transfers a signal charge in the direction of the arrows. A unit pixel,is indicated by a one-dot chain line. The two-dimensionally arrayed solid state imaging device is driven by driving pulses of eight phases in total, namely, a driving pulse &phgr;V,, a driving pulse &phgr;V,, a driving pulse &phgr;V,, a driving pulse &phgr;V,, a driving pulse &phgr;V,, a driving pulse &phgr;V,, a driving pulse &phgr;V,, and a driving pulse &phgr;V